Technology and Applications

Precision has been working with equipment suppliers to improve the techniques for batch epitaxy reaction capabilities. This will improve production efficiency, product quality and overall competitiveness . Key epitaxy process technologies such as the gas supply technique, waste gas process, pressure reduction growth technique were developed, as well as low temperature growth techniques.

Batch Reactor
Single Wafer Reactor
Diameter: 4¡¨, 5¡¨, 6¡¨
Dopant Source: B2H6,AsH3,PH3
Silicon Source: TCS
Thickness:
0.5 um¡ã180 um
Resistivity:
0.10 ohm-cm¡ã150 ohm-cm
Diameter: 6¡¨, 8¡¨
Dopant Source: B2H6,AsH3,PH3
Silicon Source: TCS,DCS,SiH4
Thickness:
0.5 um ¡ã 20 um
Resistivity:
0.10 ohm-cm¡ã150 ohm-cm
Discrete Devices

Integrated Chips

Schottky diode
Rectifier
Transistor
Power MOSFET
Sensor
BiCMOS process
HV process
Bipolar process

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