| Silicon epitaxial wafers and epitaxial services | |||||
|
Process Capability |
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| Design of Epi Layer : | |||||
| Substrate | Diameter: 4-8" | ||||
| Thickness | 0.5-150 µm | ||||
| Resistivity | 0.01-100 ohm-cm | ||||
| Si Source | TCS | ||||
| Dopant | N Type: P & As | ||||
| P Type: B | |||||
| Quality of Epi Layer : | |||||
| Batch Type |
Typical
|
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|
Thickness
|
Within - Wafer
|
1%
|
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|
Wafer
to Wafer
|
2%
|
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|
Resistivity
|
0.01-3
ohm-cm
|
1%
|
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|
3.0-50
ohm-cm
|
1.5%
|
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| Single Wafer Type(6" & 8" only) | |||||
|
Typical
|
Range
|
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| Thickness uniformity |
Within - Wafer 1.0%
|
1~100µm
|
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|
Wafer to Wafer 2.0%
|
1~100µm
|
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| Resistivity uniformity |
Within - Wafer 2.0%
|
0.01-3.0 ohm-cm
|
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|
Wafer to Wafer 3.0%
|
0.01-3.0 ohm-cm
|
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|
Within - Wafer 4.0%
|
3.0-30 ohm-cm
|
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|
Wafer to Wafer 5.0%
|
3.0-30 ohm-cm
|
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